Recent news
ALLIANCE MEMORY PARTNERS WITH MICRON SEMICONDUCTOR TO EXTEND 512M SDRAM PRODUCT LIFE CYCLE
October 20, 2014
SAN CARLOS, Calif. — October 20, 2014 — Alliance Memory today announced it has partnered with Micron Semiconductor to supply and extend availability of support for three 512M synchronous DRAM (SDRAM) devices that Micron discontinued with Micron PCN #30995 (last time buy: Feb. 28, 2014; last time ship: Oct. 31, 2015).
Alliance Memory Launches New Low-Power, High-Speed Mobile CMOS DDR SDRAMs With256-Mb, 512-Mb, 1-Gb, and 2-Gb Densities
September 16, 2014
SAN CARLOS, Calif. — September 16, 2014 — Alliance Memory today introduced a new line of high-speed mobile CMOS double data rate synchronous DRAMs (DDR SDRAM) designed to increase efficiency and extend battery life in compact portable devices. Featuring low power consumption from 1.7 V to 1.95 V and a number of power-saving features, the 256-Mb, 512-Mb, 1-Gb, and 2-Gb devices are offered in 8-mm by 9-mm 60-ball and 8-mm by 13-mm 90-ball FPBGA packages.
Alliance Memory Launches New High-Speed CMOS DDR3 SDRAMs With 1-Gb, 2-Gb, and 4-Gb Densities in 78-Ball and 96-Ball FBGA Packages
June 26, 2014
SAN CARLOS, Calif. — June 26, 2014 — Alliance Memory today introduced a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball 9 mm by 10.5 mm by 1.2 mm and 96-ball 9 mm by 13 mm by 1.2 mm FBGA packages. With their double data rate architecture, the devices released today offer extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz.
